Ultra-high-voltage N-channel MOSFETs
BIM5N120
Ultra-high-voltage N-channel MOSFETs
Cross Reference
IXPT5N120
Cross references are selection aids. Confirm pinout, electrical limits and qualification before substitution.
Product overview
- BI Part Number
- BIM5N120
- Product group
- MOSFETs, SiC & IGBTs
- Product family
- Ultra-high-voltage N-channel MOSFETs
- Function
- Ultra-high-voltage N-channel MOSFETs
- Package
- TO-263
- Entry type
- Model
Electrical parameters
| Parameter | Value |
|---|---|
| BVDSS (V) | 1200 |
| Drain current (A) | 5 |
| On resistance (Ω) | 2.6 |
| Gate threshold min (V) | 3 |
| Gate threshold max (V) | 5 |
Values are transcribed from the selection handbook. Separate listings preserve differing records for the same model. “—” indicates an unlisted value. Use the device documentation for design limits and test conditions.